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Spin polarized photoemission from strained Ge epilayers

Published:2011-06-13 Issue:24 Volume:98 Page:242107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bottegoni Federico,Isella Giovanni,Cecchi Stefano,Ciccacci Franco

Funder

Ministro dell'Istruzione dell'Università e della Ricerca (MIUR) Italy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3599493

Reference24 articles.

1. Spin-Polarized Photoemission by Optical Orientation

2. Negative affinity 3–5 photocathodes: Their physics and technology

3. Photoemission of spin-polarized electrons from GaAs

4. The GaAs spin polarized electron source

5. Luminescence studies of optically pumped quantum wells in GaAs-AlxGa1−xAsmultilayer structures

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3. Doping dependence of the electron spin diffusion length in germanium;APL Materials;2019-10-01

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