Photoluminescence of GaInP under high pressure-Reference-Cited by-同舟云学术

Photoluminescence of GaInP under high pressure

Published:1996-05-01 Issue:9 Volume:79 Page:7177-7182
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Dong Jianrong¹,Li Guohua²,Wang Zhanguo¹,Lu Dacheng¹,Liu Xianglin¹,Li Xiaobing¹,Sun Dianzhao¹,Kong Meiying¹,Wang Zhijie³

Affiliation:

1. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China

2. National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China

3. National Integrated Optoelectronics Laboratories, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference23 articles.

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