Atomic-Level Stress Calculation and Two Potentials for Critical Conditions of Deposition Process-Reference-Cited by-同舟云学术

Atomic-Level Stress Calculation and Two Potentials for Critical Conditions of Deposition Process

Published:2008-02-28 Issue:4 Volume:8 Page:1191-1199
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Hong Zheng-Han¹,Hwang Shun-Fa¹,Fang Te-Hua¹

Affiliation:

1. Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, 123 University Road, Sec. 3, Douliu, Taiwan 640, P. R. China, and Institute of Mechanical and Electromechanical Engineering, National Formosa University, 64 Wunhua Road, Huwei, Taiwan 632, P. R. China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg070584h

Reference25 articles.

1. Photoluminescence of GaInP under high pressure

2. A two‐dimensional molecular dynamics simulation of thin film growth by oblique deposition

3. A molecular dynamics study of deposition rate dependence of film morphology in the sputtering process

4. Topographic study of sputter-deposited film with different process parameters

5. Application of the Morse Potential Function to Cubic Metals

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