Direct transition of a HfGeTe4 ternary transition-metal chalcogenide monolayer with a zigzag van der Waals gap-Reference-Cited by-同舟云学术

Direct transition of a HfGeTe4 ternary transition-metal chalcogenide monolayer with a zigzag van der Waals gap

Published:2018-04 Issue:4 Volume:6 Page:046104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Saito Yuta¹²^ORCID,Robertson John²

Affiliation:

1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Higashi 1-1-1, Tsukuba 305-8565, Japan

2. Department of Engineering, Cambridge University, 9 J J Thomson Avenue, Cambridge CB3 0FA, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5023577

Reference37 articles.

1. Van der Waals heterostructures

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Single-layer MoS2 transistors

4. Tuning the electronic properties of transition-metal trichalcogenides via tensile strain

5. Few-layered titanium trisulfide (TiS3) field-effect transistors

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