Few-layered titanium trisulfide (TiS3) field-effect transistors-Reference-Cited by-同舟云学术

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Few-layered titanium trisulfide (TiS3) field-effect transistors

Published:2015 Issue:29 Volume:7 Page:12291-12296
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lipatov Alexey,Wilson Peter M.,Shekhirev Mikhail,Teeter Jacob D.,Netusil Ross,Sinitskii Alexander

Funder

Division of Materials Research

Office of Experimental Program to Stimulate Competitive Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR01895A

Reference44 articles.

1. Two-dimensional atomic crystals

2. Van der Waals heterostructures

3. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

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1. Exploring defect engineering in monolayer TiS3 for next-generation electronic devices: Insights from first-principles study;Computational Condensed Matter;2024-09

2. A theoretical analysis to reveal the prospects of MoS₂ as a back surface field layer in TiS₃-based near infrared photodetector;Engineering Research Express;2024-05-20

3. From Insulator to Superconductor: A Series of Pressure-Driven Transitions in Quasi-One-Dimensional TiS₃ Nanoribbons;Nano Letters;2024-04-29

4. Thermodynamics and Kinetics in Anisotropic Growth of One-Dimensional Midentropy Nanoribbons;ACS Nano;2023-07-19

5. Synergistic Effect of TiS₃ and Ti₃C₂T_x MXene for Temperature-Tunable p-/n-Type Gas Sensing;ACS Applied Nano Materials;2023-05-30

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