The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3416681
Reference25 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
4. Stokes Shift and Band Gap Bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy
5. Conduction in glasses containing transition metal ions
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