Charge transport properties in CdZnTeSe semiconductor room-temperature γ-ray detectors
Author:
Affiliation:
1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29201, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0006227
Reference32 articles.
1. Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications
2. Pulse-shape analysis in Cd0.9Zn0.1Te0.98Se0.02 room-temperature radiation detectors
3. Growth and characterization of detector-grade CdZnTeSe by horizontal Bridgman technique
4. Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects
5. High-resolution virtual Frisch grid gamma-ray detectors based on as-grown CdZnTeSe with reduced defects
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1. Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection;Electronics Letters;2024-09
2. Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors;Sensors;2024-01-06
3. Deep Learning-Based Classification of Gamma Photon Interaction in Room-Temperature Semiconductor Radiation Detectors;IEEE Access;2024
4. Charge Trapping Effects in THM- and VGF-Grown CdZnTeSe Radiation Detectors;IEEE Transactions on Nuclear Science;2023-09
5. Feasibility study of CdZnTe and CdZnTeSe based high energy X-ray detector using linear accelerator;Nuclear Engineering and Technology;2023-08
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