Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient-Reference-Cited by-同舟云学术

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Published:2017-01-21 Issue:3 Volume:121 Page:035303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yamada Takahiro¹,Ito Joyo¹,Asahara Ryohei¹,Watanabe Kenta¹,Nozaki Mikito¹,Nakazawa Satoshi²,Anda Yoshiharu²,Ishida Masahiro²,Ueda Tetsuzo²,Yoshigoe Akitaka³,Hosoi Takuji¹,Shimura Takayoshi¹^ORCID,Watanabe Heiji¹

Affiliation:

1. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

2. Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan

3. Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4974458

Reference35 articles.

1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Development of High-bright and Pure-white LED Lamps.

4. Properties of Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])/GaN metal–insulator–semiconductor diodes

5. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

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