Study of molecular‐beam epitactic growth of GaAs on (100) ScxE1−xAs/GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359454
Reference11 articles.
1. Epitaxial growth of ErAs on (100)GaAs
2. Study of ErAs/GaAs strained‐layer structures using optical absorption and ion channeling
3. Lattice‐matched Sc1−xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice‐matched metallic compounds to semiconductors
4. Epitaxial growth of metallic ErP, ErSb and lattice-matched ErPxSb1−x layers on (001)InP and (001)GaAs
5. Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a GSMBE system
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hybrid epitaxial structures for spintronics;Thin Solid Films;2002-06
2. Growth kinetic of MgO film on r-plane of sapphire: microstructural study;Journal of Crystal Growth;2001-06
3. Spontaneous twin formation in ZnSe films grown by molecular beam epitaxy;Philosophical Magazine A;1999-03
4. The {111}/{100} Interface in Cubic Materials and Related Systems;physica status solidi (a);1998-03
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