Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a GSMBE system-Reference-Cited by-同舟云学术

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Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a GSMBE system

Published:1990-10 Issue:1-4 Volume:105 Page:234-239
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Le Corre A.,Guenais B.,Guivarc'h A.,Lecrosnier D.,Caulet J.,Minier M.,Ropars G.,Badoz P.A.,Duboz J.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals

2. Gallium Arsenide Material Devices and Circuits;Palmström,1985

3. Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system

4. Composés métalliques de nickel et gallium sur GaAs par codéposition en ultravide

5. Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures

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1. Formation of microtwins in TmP/GaAs heterostructures;Journal of Crystal Growth;2003-01

2. Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy;Journal of Materials Research;2001-11

3. Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures;Journal of Electronic Materials;1998-05

4. Electronic structure of rare-earth pnictides;Physical Review B;1996-02-15

5. Growth by molecular beam epitaxy of (rare-earth group V element)/III-V semiconductor heterostructures;Journal of Materials Research;1995-08

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