Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1599036
Reference6 articles.
1. Picosecond four‐wave‐mixing in GaN epilayers at 532 nm
2. Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free‐carrier gratings
3. Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures
4. Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition
5. Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures
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