Photoluminescence determination of the Fermi energy in heavily doped strained Si1−xGexlayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111753
Reference13 articles.
1. Evidence of the influence of heavy-doping induced bandgap narrowing on the collector current of strained SiGe-base heterojunction bipolar transistors
2. Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of long wave-length infrared (LWIR) detectors
3. Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si1−xGex layers
4. Comparison of band‐gap shrinkage observed in luminescence fromn+‐Si with that from transport and optical absorption measurements
5. Heavily doped silicon studied by luminescence and selective absorption
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of Carrier Density and Dynamics via Magnetoelectroluminescence Spectroscopy in Resonant-Tunneling Diodes;Physical Review Applied;2021-01-22
2. Effect of heavy boron doping on the electrical characteristics of SiGe HBTs;Semiconductor Science and Technology;2007-07-06
3. Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers;Chinese Physics Letters;2007-06
4. Bibliography;Silicon-Germanium Strained Layers and Heterostructures;2003
5. Study of dopant-dependent band gap narrowing in compound semiconductor devices;Materials Science and Engineering: B;1999-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3