Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4833755
Reference21 articles.
1. The rise of graphene
2. Superior Thermal Conductivity of Single-Layer Graphene
3. Graphene transistors
4. Epitaxial Graphene Transistors on SiC Substrates
5. Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
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1. Proposal for stochastic resonance in a ferroelectric-graphene transistor;2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM);2023-08-28
2. Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC;Nanomaterials;2020-11-11
3. Device applications of epitaxial graphene on silicon carbide;Vacuum;2016-06
4. Statistics of epitaxial graphene for Hall effect sensors;Carbon;2015-11
5. A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation Treatment;Materials Science Forum;2015-06
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