Surface and interface free‐carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102731
Reference7 articles.
1. Surface and interface depletion corrections to free carrier-density determinations by hall measurements
2. Depletion corrections in variable temperature Hall measurements
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4. Unified defect model and beyond
5. Effect of substrate temperature on molecular beam epitaxial GaAs growth using As2
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