Electronic and magnetic properties of N-N split substitution in GaAs: A hybrid density functional study-Reference-Cited by-同舟云学术

Electronic and magnetic properties of N-N split substitution in GaAs: A hybrid density functional study

Published:2015-07 Issue:7 Volume:5 Page:077187
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Huang Ruiqi¹,Wang Sanjun²,Wang Qingxia¹,Cai Xiaolin¹,Li Chong¹,Jia Yu¹,Wang Fei¹

Affiliation:

1. International Joint Research Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China

2. Department of Physics, Henan Institution of Education, Zhengzhou, 450046, China

Funder

National Natural Science Foundation of China (NSFC)

China Scholarship Council (CSC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/7/1.4928073.pdf?itemId=/content/aip/journal/adva/5/7/10.1063/1.4928073&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference33 articles.

2. Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band of localized and delocalized states

3. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP

4. Electronic and optical properties of quaternary alloy GaAsBiN lattice-matched to GaAs

5. Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs

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