Impedance independent optical carrier lifetime measurements in semiconductor lasers
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1149239
Reference5 articles.
1. True carrier lifetime measurements of semiconductor lasers
2. Impedance‐corrected carrier lifetime measurements in semiconductor lasers
3. Low threshold current 1.3 [micro sign]m InAsP/InGaAsP lasers grown by gas-source molecular beam epitaxy
4. Impedance characteristics of quantum-well lasers
5. Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells
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1. Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures;Applied Physics Letters;2016-07-18
2. High bandwidth constant current modulation circuit for carrier lifetime measurements in semiconductor lasers;SPIE Proceedings;2012-02-23
3. Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers;IEEE Journal of Selected Topics in Quantum Electronics;2005-09
4. Increased monomolecular recombination in MOCVD grown 1.3-/spl mu/m InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements;IEEE Photonics Technology Letters;2005-05
5. Improvement in the frequency response of 1.3-μm buried heterostructure InAsP lasers;SPIE Proceedings;2002-06-13
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