A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures-Reference-Cited by-同舟云学术

A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

Author:

Purches W. E.¹,Rossi A.²,Zhao R.²^ORCID,Kafanov S.¹³^ORCID,Duty T. L.¹³,Dzurak A. S.²⁴,Rogge S.¹⁴,Tettamanzi G. C.¹⁴^ORCID

Affiliation:

1. School of Physics, UNSW, Sydney 2052, Australia

2. School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052, Australia

3. Centre for Engineered Quantum Systems (EQuS), School of Physics, UNSW, Sydney 2052, Australia

4. Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052, Australia

Funder

The University of New South Wales Gold Star Award

Australian Research Council (ARC)

Australian National Fabrication Facility (ANFF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference28 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献