An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366535
Reference15 articles.
1. A characterization model for ramp-voltage-stressed I-V characteristics of thin thermal oxides grown on silicon substrate
2. Space‐Charge‐Limited Tunnel Emission into an Insulating Film
3. Electron trapping/detrapping within thin SiO2films in the high field tunneling regime
4. Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges
5. Effect of tunneling electrons in Fowler–Nordheim regime on the current‐voltage characteristics and model of degradation of metal‐oxide‐semiconductor capacitors
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1. Accuracy assessment of sheet-charge approximation for Fowler-Nordheim tunneling into charged insulators;Journal of Applied Physics;2013-10-07
2. Spin-charge multi injection mechanism of a magneto-electric capacitor;Journal of the Ceramic Society of Japan;2013
3. Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates;Microelectronics Reliability;2012-01
4. Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler–Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections;Journal of Applied Physics;2011-05-15
5. Electrically Erasable Metal–Oxide–Semiconductor Dosimeters;IEEE Transactions on Nuclear Science;2007-08
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