Effect of tunneling electrons in Fowler–Nordheim regime on the current‐voltage characteristics and model of degradation of metal‐oxide‐semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357888
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1. Temperature Dependence of the Tunnel-Emission Conduction Current in Metal-ZrO[sub 2]-Silicon Capacitor Structures;Journal of The Electrochemical Society;2006
2. Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures;The European Physical Journal Applied Physics;2005-09
3. Modelling of the influence of charges trapped in the oxide on theI(Vg) characteristics of metal–ultra-thin oxide–semiconductor structures;Semiconductor Science and Technology;2004-06-02
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