The study of conductance in magnetic tunnel junctions with a thin MgO barrier: The effect of Ar pressure on tunnel magnetoresistance and resistance area product-Reference-Cited by-同舟云学术

The study of conductance in magnetic tunnel junctions with a thin MgO barrier: The effect of Ar pressure on tunnel magnetoresistance and resistance area product

Published:2012-02 Issue:3 Volume:111 Page:033903
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zaleski A.,Wrona J.,Czapkiewicz M.,Skowroński W.,Kanak J.,Stobiecki T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3679543

Reference22 articles.

1. Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier

2. Characterization of growth and crystallization processes in CoFeB∕MgO∕CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction

3. Effect of Buffer Layer Texture on the Crystallization of CoFeB and on the Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions

4. Ultralow resistance-area product of 0.4Ω(μm)2 and high magnetoresistance above 50% in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

5. Ultralow resistance-area product of 0.4Ω(μm)2 and high magnetoresistance above 50% in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

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