Solid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer-Reference-Cited by-同舟云学术

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Solid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer

Published:1989-08-21 Issue:8 Volume:55 Page:747-748
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hong Q. Z.,Zhu J. G.,Mayer J. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.101794

Reference4 articles.

1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

2. Growth of GeSi/Si strained‐layer superlattices using limited reaction processing

3. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge

4. Dissociation mechanism for solid‐phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) system

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1. Contact Metallization on Silicon‚ÄìGer manium;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13

2. Overview;Silicon Heterostructure Handbook;2005-11

3. Contact Metallization on Silicon–Germanium;Silicon Heterostructure Handbook;2005-11

4. Contact metallization on strained-Si;Solid-State Electronics;2004-08

5. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11

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