Ultrathin silicon oxynitride formed by low-energy electron impact plasma nitridation and chemical oxidation methods
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1578702
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1. Direct extraction of the electron tunneling effective mass in ultrathin SiO2
2. 1.5 nm direct-tunneling gate oxide Si MOSFET's
3. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
4. Improvement of oxynitride reliability by two-step N2O nitridation
5. Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal
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