Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy-Reference-Cited by-同舟云学术

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

Published:2016-06-28 Issue:24 Volume:119 Page:244308
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Jheng-Sin¹,Clavel Michael B.¹^ORCID,Pandey Rahul²,Datta Suman³,Meeker Michael⁴,Khodaparast Giti A.⁴,Hudait Mantu K.¹

Affiliation:

1. Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA

2. Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

3. Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

4. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, USA

Funder

National Science Foundation (NSF)

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/119/24/1.4954794.pdf?itemId=/content/aip/journal/jap/119/24/10.1063/1.4954794&mimeType=pdf&containerItemId=content/aip/journal/jap

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3. Microstructure and conductance-slope of InAs/GaSb tunnel diodes

4. Integration of broken-gap heterojunction InAs/GaSb Esaki tunnel diodes on silicon

5. D. Pawlik , B. Romanczyk , P. Thomas , S. Rommel , M. Edirisooriya , R. Contreras-Guerrero , R. Droopad , W.Y. Loh , M. H. Wong , K. Majumdar , W.E. Wang , P. D. Kirsch , and R. Jammy , in Proceedings of the IEEE Conference of Electron Devices Meeting (IEDM) (2012), p. 812.

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