Depth resolved band alignments of ultrathin TiN/ZrO2and TiN/ZrO2-Al2O3-ZrO2dynamic random access memory capacitors-Reference-Cited by-同舟云学术

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Depth resolved band alignments of ultrathin TiN/ZrO2and TiN/ZrO2-Al2O3-ZrO2dynamic random access memory capacitors

Published:2014-11-17 Issue:20 Volume:105 Page:201603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Sang Yeon¹,Chang Jaewan²,Kim Younsoo²,Lim HanJin²,Jeon Hyeongtag³,Seo Hyungtak¹⁴

Affiliation:

1. Department of Energy Systems Research, Ajou University, Suwon 443-739, South Korea

2. Samsung Electronics, 1-1, Samsungeonja-ro, Hwasung-si, Gyeonggi-do 445-701, South Korea

3. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea

4. Department of Materials Science and Engineering, Ajou University, Suwon 443-739, South Korea

Funder

Samsung Electronics

Ajou University

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902244

Reference22 articles.

1. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

2. Active control and spatial mapping of mid-infrared propagating surface plasmons

3. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide

4. Structural and dielectric properties of crystalline and amorphous ZrO2

5. Cesium-Filled Single Wall Carbon Nanotubes as Conducting Nanowires: Scanning Tunneling Spectroscopy Study

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4. The Contrasting Impacts of the Al ₂ O ₃ and Y ₂ O ₃ Insertion Layers on the Crystallization of ZrO ₂ Films for Dynamic Random Access Memory Capacitors;Advanced Electronic Materials;2022-04-04

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