Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors-Reference-Cited by-同舟云学术

Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors

Published:2006 Issue:11 Volume:100 Page:113726
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Sakowicz M.,Tauk R.,Łusakowski J.,Tiberj A.,Knap W.,Bougrioua Z.,Azize M.,Lorenzini P.,Karpierz K.,Grynberg M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference20 articles.

1. For an overview of classical magnetotransport phenomena, see A. C. Beer ,Galvanomagnetic Effects in Semiconductors, Solid State Physics Suppl. 4 Academic, New York (1963);

2. M. Shur ,Physics of Semiconductor Devices(Prentice-Hall, Englewood, Cliffs, NJ, 1990).

3. The characterization of high electron mobility transistors using Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements

4. Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

5. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

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