Thermal rectification in silicon by a graded distribution of defects-Reference-Cited by-同舟云学术

Thermal rectification in silicon by a graded distribution of defects

Published:2016-06-07 Issue:21 Volume:119 Page:215102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dettori Riccardo¹,Melis Claudio¹²,Rurali Riccardo³^ORCID,Colombo Luciano¹²³⁴^ORCID

Affiliation:

1. Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, I-09042 Monserrato (Ca), Italy

2. Istituto Officina dei Materiali, CNR-IOM SLACS Cagliari, Cittadella Universitaria, Monserrato (Ca) 09042-I, Italy

3. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain

4. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Nanoscience and Nanotechnology, Campus UAB, 08193 Bellaterra, Barcelona, Spain

Funder

Generalidad de Catalunya

Ministerio de Economía y Competitividad

Regione Sardegna

Ministerio de Economía y Competitividad (MINECO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953142

Reference33 articles.

1. Thermal Diode: Rectification of Heat Flux

2. A review of thermal rectification observations and models in solid materials

3. Solid-State Thermal Rectification With Existing Bulk Materials

4. Nanoscale thermal transport. II. 2003–2012

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