Hall‐effect measurements in Cd‐implanted GaAs-Reference-Cited by-同舟云学术

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Hall‐effect measurements in Cd‐implanted GaAs

Published:1976-04 Issue:4 Volume:47 Page:1574-1579
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Shin B. K.¹,Look D. C.²,Park Y. S.³,Ehret J. E.³

Affiliation:

1. Systems Research Laboratories, Incorporated, 2800 Indian Ripple Road, Dayton, Ohio 45440

2. Department of Physics, University of Dayton, Dayton, Ohio 45469

3. Air Force Avionics Laboratory, Wright‐Patterson Air Force Base, Ohio 45433

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference37 articles.

1. R. G. Hunsperger and O. J. Marsh, J. Electrochem. Soc. 116, 488 (1969).JESOAN0013-4651

2. R. G. Hunsperger and O. J. Marsh, Radiat. Eff. 6, 263 (1970).RAEFBL0033-7579

3. T. Itoh and Y. Kushiro, J. Appl. Phys. 42, 5120 (1971).JAPIAU0021-8979

4. J. D. Sansbury and J. F. Gibbons, Radiat. Eff. 6, 269 (1970).RAEFBL0033-7579

5. J. W. Mayer, O. J. Marsh, R. Mankarious, and R. Bower, J. Appl. Phys. 38, 1975 (1967).JAPIAU0021-8979

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1. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

2. Comparative studies of Mg implants in GaAs in different annealing environments;Nuclear Instruments and Methods;1981-04

3. The electrical characteristics of ion implanted compound semiconductors;Nuclear Instruments and Methods;1981-04

4. Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication;IEE Proceedings I Solid State and Electron Devices;1981

5. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions;Soviet Physics Journal;1981-01

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