Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies-Reference-Cited by-同舟云学术

Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies

Published:2017-07-21 Issue:3 Volume:122 Page:035303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Prucnal S.¹^ORCID,Wu Jiada²^ORCID,Berencén Y.¹^ORCID,Liedke M. O.³,Wagner A.³^ORCID,Liu F.¹,Wang M.¹,Rebohle L.¹,Zhou S.¹^ORCID,Cai Hua²,Skorupa W.¹

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraβe 400, D-01328 Dresden, Germany

2. Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

3. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics, Bautzner Landstraβe 400, D-01328 Dresden, Germany

Funder

Helmholtz-Gemeinschaft (HGF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4994796

Reference45 articles.

1. Evolution of deep electronic states in ZnO during heat treatment in oxygen- and zinc-rich ambients

2. Oxygen rich p-type ZnO thin films using wet chemical route with enhanced carrier concentration by temperature-dependent tuning of acceptor defects

3. Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

4. Point defects in ZnO

5. A comparative analysis of deep level emission in ZnO layers deposited by various methods

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