Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4769827
Reference24 articles.
1. Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications
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3. Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag
4. Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN
5. Atomic Layer Deposition: An Overview
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