Diffusivity of oxygen in Czochralski silicon at 400–750 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368509
Reference17 articles.
1. Diffusivity of oxygen in silicon at the donor formation temperature
2. Radiation-enhanced diffusion of oxygen in silicon at room temperature
3. Mechanism of the Formation of Donor States in Heat-Treated Silicon
4. Enhanced oxygen diffusion in silicon at thermal donor formation temperature
5. Enhanced and wafer‐dependent oxygen diffusion in CZ‐Si at 500–700 °C
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