Photoreflectance study of thermal degradation of n-InP/p+-InGaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1352678
Reference15 articles.
1. 80 GHz 4:1 frequency divider IC using non-self-aligned InP/InGaAs heterostructure bipolar transistors
2. Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures
3. Theoretical and experimental results forp-type GaAs electrolyte electroreflectance
4. Generalized Franz-Keldysh theory of electromodulation
5. Plasma-Induced Damage Behavior in GaAs by Photoreflectance Spectroscopy
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2. Photoreflectance analysis of annealed vanadium-doped GaAs thin films grown by metalorganic vapor phase epitaxy;Solid State Communications;2015-09
3. Photoreflectance characterization of InP∕GaAsSb double-heterojunction bipolar transistor epitaxial wafers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
4. Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors;MRS Proceedings;2004
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