80 GHz 4:1 frequency divider IC using non-self-aligned InP/InGaAs heterostructure bipolar transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000111?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBTs under bias and temperature stress
2. Very-high-speed Si bipolar static frequency dividers with new T-type flip-flops
3. 3.5 GHz bandwidth, 30 dB gain Si monolithic amplifier
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2. The InP-HEMT IC Technology for 40-Gbit/s Optical Communications;International Journal of High Speed Electronics and Systems;2003-03
3. 108 GHz dynamic frequency divider in 100 nm metamorphic enhancement HEMT technology;Electronics Letters;2003
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