3.5 GHz bandwidth, 30 dB gain Si monolithic amplifier
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19890155?crawler=true&mimetype=application/pdf
Reference6 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 80 GHz 4:1 frequency divider IC using non-self-aligned InP/InGaAs heterostructure bipolar transistors;Electronics Letters;2000
2. 40 Gbit/s decision IC using InP/InGaAs composite-collector heterojunction bipolar transistors;Electronics Letters;1999
3. InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers;IEEE Transactions on Electron Devices;1996
4. double-heterostructure bipolar transistors for high-speed ICs and OEICs;Solid-State Electronics;1995-09
5. Multi-Gb/s silicon bipolar clock recovery IC;IEEE Journal on Selected Areas in Communications;1991-06
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