Electrical characterization of silicon epitaxial layers grown by limited reaction processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347721
Reference4 articles.
1. Limited reaction processing: Silicon epitaxy
2. Characterization of epitaxial silicon layers made by reduced pressure/temperature CVD
3. Silicon selective epitaxial growth at reduced pressure and temperature
4. A simple method of modelling the C-tV profiles of high-low junctions and heterojunctions
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1. Rapid Thermal Chemical Vapor Deposition;Rapid Thermal Processing of Semiconductors;1997
2. Selective epitaxial Si based layers and TiSi2 deposition by integrated chemical vapor deposition;Applied Surface Science;1996-07
3. Annealing study of electron irradiation‐induced defects in SiGe alloys;Applied Physics Letters;1995-03-13
4. Thin-Film Deposition;Rapid Thermal Processing;1993
5. Rapid Thermal Processing–Based Epitaxy;Rapid Thermal Processing;1993
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