Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells-Reference-Cited by-同舟云学术

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Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells

Published:2011-02-14 Issue:7 Volume:98 Page:072512
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zeng Z. M.,Khalili Amiri P.,Rowlands G.,Zhao H.,Krivorotov I. N.,Wang J.-P.,Katine J. A.,Langer J.,Galatsis K.,Wang K. L.,Jiang H. W.

Funder

Defense Advanced Research Projects Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3556615

Reference17 articles.

1. Current-driven excitation of magnetic multilayers

2. Emission of spin waves by a magnetic multilayer traversed by a current

3. Magnetic Tunnel Junctions for Spintronic Memories and Beyond

4. Fabrication and characterization of MgO-based magnetic tunnel junctions for spin momentum transfer switching

5. Advances and Future Prospects of Spin-Transfer Torque Random Access Memory

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