Influence of quantum‐mechanical reflection at the emitter‐base spike on the base transit time through abrupt heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360441
Reference10 articles.
1. On the estimation of base transit time in AlGaAs/GaAs bipolar transistors
2. Monte Carlo evaluation of electron transport in heterojunction bipolar transistor base structures
3. Regional Monte Carlo modeling of electron transport and transit-time estimation in graded-base HBT's
4. Self-consistent particle simulation for (AlGa)As/GaAs HBTs with improved base-collector structures
5. Numerical study of nonequilibrium electron transport in AlGaAs/GaAs heterojunction bipolar transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ensemble Monte Carlo analysis of self-heating effects in graded heterojunction bipolar transistors;Journal of Applied Physics;1998-02-15
2. Hole tunneling through the emitter-base junction of a heterojunction bipolar transistor;Physical Review B;1997-08-15
3. Trends in the emitter‐base bias dependence of the average base transit time through abrupt heterojunction bipolar transistors;Journal of Applied Physics;1996-11
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