Numerical study of nonequilibrium electron transport in AlGaAs/GaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101921
Reference11 articles.
1. The dielectric constant and plasma frequency of p-type Ge like semiconductors
2. Scaling ‘ballistic’ heterojunction bipolar transistors
3. Influence of temperature on electron transport in bipolar devices
4. Monte Carlo determination of electron transport properties in gallium arsenide
5. Extreme nonequilibrium electron transport in heterojunction bipolar transistors
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1. Influence of quantum‐mechanical reflection at the emitter‐base spike on the base transit time through abrupt heterojunction bipolar transistors;Journal of Applied Physics;1995-12
2. Monte Carlo modelling of hot-electron relaxation in the base region of AlInAs/GaInAs heterojunction bipolar transistors;Semiconductor Science and Technology;1994-03-01
3. Comparison of graded and abrupt junction In0.53Ga0.47As heterojunction bipolar transistors;Applied Physics Letters;1994-01-03
4. Hot Electron Transistors;VLSI Electronics Microstructure Science;1994
5. Forward delay in scaled Al0.48In0.52As/In0.53Ga0.47As heterojunction bipolar transistors;Applied Physics Letters;1993-10-18
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