Temperature and pressure dependence of the recombination processes in 1.5μm InAs∕InP (311)B quantum dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2790777
Reference18 articles.
1. Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments
2. Electronic and optical properties ofInAs∕InPquantum dots on InP(100) andInP(311)Bsubstrates: Theory and experiment
3. Room-Temperature Operation of InP-Based InAs Quantum Dot Laser
4. Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core
5. Room-temperature operation of InAs quantum-dash lasers on InP [001]
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4. Optical properties of excitons in strained Gax In1-xAs/GaAs quantum dot: ef fect of geometrical conf inement on exciton g-factor;Chinese Optics Letters;2013
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