Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes
Author:
Funder
Korean Research Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4717493
Reference21 articles.
1. Transcending the replacement paradigm of solid-state lighting
2. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
3. Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate
4. Study of GaN light-emitting diodes fabricated by laser lift-off technique
5. Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques
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