Dependence of the GaAs/AlGaAs superlattice ionization rate on Al content
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100825
Reference10 articles.
1. Impact ionisation in multilayered heterojunction structures
2. Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
3. Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices
4. Electron and hole impact ionization rates in InP/Ga<inf>0.47</inf>In<inf>0.53</inf>As superlattice
5. Properties of GaAs/Al0.53Ga0.47As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
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