Carbon incorporation during growth of GaAs by TEGa‐AsH3 base low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353935
Reference22 articles.
1. High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base
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3. AlGaAs/GaAs p-MODFET materials grown using intrinsic carbon doping
4. Interactions between implanted Mg and base p‐type dopant (Be,Zn,C) in heterojunction bipolar transistor devices
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1. p-type doping of GaAs nanowires using carbon;Journal of Applied Physics;2012-11
2. Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources;Crystal Research and Technology;2005-11
3. Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy;Journal of Applied Physics;1999-07
4. Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer;Japanese Journal of Applied Physics;1999-03-15
5. In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs;Applied Physics A: Materials Science & Processing;1999-03-01
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