Properties of hydrogenated amorphous silicon prepared by biased activated reactive evaporation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338212
Reference18 articles.
1. Investigation of the localised state distribution in amorphous Si films
2. Activated reactive evaporation of hydrogenated amorphous silicon
3. Reversible conductivity changes in discharge‐produced amorphous Si
4. Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2
5. Local bonding of oxygen and hydrogen in a‐Si:H:O thin films
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Unusual hydrogen distribution and its change in hydrogenated amorphous silicon prepared using bias electric-field molecular beam deposition;Applied Physics Letters;2006-07-03
2. Novel network control in hydrogenated amorphous silicon by molecular beam deposition method;Journal of Non-Crystalline Solids;2004-06
3. Properties of amorphous Si:H films grown by high‐vacuum codeposition of Si and H atoms;Journal of Applied Physics;1995-06-15
4. Stability of hydrogenated amorphous silicon prepared by reactive evaporation;Canadian Journal of Physics;1991-06-01
5. Extended x-ray-absorption and electron-energy-loss fine-structure studies of the local atomic structure of amorphous unhydrogenated and hydrogenated silicon carbide;Physical Review B;1988-12-15
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