Thermally stable ohmic contacts ton‐type GaAs. V. Metal‐semiconductor field‐effect transistors with NiInW ohmic contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342629
Reference16 articles.
1. Comparison of low temperature and high temperature refractory metal/silicides self-aligned gate on GaAs
2. Characterization of reactively sputtered WNx film as a gate metal for self-alignment GaAs metal–semiconductor field effect transistors
3. A 630-mS/mm GaAs MESFET with Au/WSiN refractory metal gate
4. Uniform and thermally stable AuGeNi ohmic contacts to GaAs
5. Metal-semiconductor contacts for GaAs bulk effect devices
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