Effects of heat treatment and plastic deformation on the photoelectronic properties of high‐resistivity GaAs : Cr
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321564
Reference23 articles.
1. Antimony Edge Dislocations in InSb
2. Plastic Bending of InSb
3. The electrical properties of dislocations in semiconductors
4. The effect of plastic bending on the electrical properties of indium antimonide
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dislocation-assisted complex scattering mobility of electrons in plastically deformed n-GaAs single crystals;Journal of Alloys and Compounds;1994-02
2. Defects with deep levels induced by plastic deformation and electron irradiation in El2-free GaAs;Radiation Effects and Defects in Solids;1989-12
3. Defects with Deep Levels in GaAs Induced by Plastic Deformation and Electron Irradiation;Japanese Journal of Applied Physics;1988-10-20
4. Hall effect of plastically deformed GaAs;physica status solidi (a);1986-10-16
5. Deep-Level Transient Spectroscopy of Plastically-Bent Epitaxial GaAs;Japanese Journal of Applied Physics;1983-10-20
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