Defects with deep levels induced by plastic deformation and electron irradiation in El2-free GaAs-Reference-Cited by-同舟云学术

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Defects with deep levels induced by plastic deformation and electron irradiation in El2-free GaAs

Published:1989-12 Issue:1-2 Volume:111-112 Page:425-437
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Wakamiya Takeshi,Suezawa Masashi,Sumino Koji

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420158908213016

Reference26 articles.

1. Effects of heat treatment and plastic deformation on the photoelectronic properties of high‐resistivity GaAs : Cr

2. Cathodoluminescence and electrical anisotropy from α and β dislocations in plastically deformed gallium arsenide

3. Effect of plastic deformation on the EPR spectrum of semi-insulating GaAs:Cr

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Capacitance transient study of deformation-induced defects in n-type GaAs;Physica Status Solidi (a);1993-08-16

2. Infrared absorption by deep levels in low-temperature electron-irradiated GaAs;Physical Review B;1992-04-15

3. Deformation‐induced defects in GaAs;Journal of Applied Physics;1991-04

4. CATHODOLUMINESCENCE RELATED TO DISLOCATIONS IN GaAs;Defect Control in Semiconductors;1990

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