Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack

Author:

Dossena M.1ORCID,Malavena G.1,Spinelli A. S.1,Monzio Compagnoni C.1ORCID

Affiliation:

1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milan, Italy

Abstract

In this paper, we report a comprehensive modeling investigation of the Pt/[Formula: see text]/Nb:[Formula: see text] stack designed to operate as a Ferroelectric Tunnel Junction (FTJ). The analysis accounts for some specific features of the materials in the stack that are typically overlooked, such as the electric field dependence of the dielectric constant of Nb:[Formula: see text] and the dependence of the dielectric constant of [Formula: see text] on its thickness. Modeling results are validated through a systematic and consistent comparison with experimental data for the current–voltage characteristics of devices with different stack parameters, at different temperatures. From that, the resistive memory window of an FTJ based on the Pt/[Formula: see text]/Nb:[Formula: see text] stack is then explored over its design space. Results allow to comprehensively assess the ultimate performance of the device, providing hints for the successful development of next-generation FTJ-based memory technologies.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3