Observation of hysteresis, transients, and photoeffects in the electrical properties of ZnSe/GaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347066
Reference49 articles.
1. Structural properties of the ZnSe/GaAs system grown by molecular‐beam epitaxy
2. Crystal orientation dependence of the electrical transport and lattice structure of zinc selenide films grown by metalorganic chemical vapor deposition
3. LEED and AES characterization of the GaAs(110)–ZnSe interface
4. LEED and AES characterization of the GaAs(110)–ZnSe interface
5. Structural characterization of GaAs/ZnSe interfaces
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1. Investigation of persistent photoconductivity in nitrogen-doped ZnSe/GaAs heterojunctions grown by MBE;Journal of Crystal Growth;2000-06
2. Evidence of strong effect from the interface on the electrical characteristics of ZnSe/GaAs heterojunctions;Journal of Applied Physics;1999-04
3. The observation of persistent photoconductivity in N-doped p-type ZnSe/GaAs heterojunctions;Journal of Physics D: Applied Physics;1999-01-01
4. Photosensitivity and switching of ZnSe/GaAs heterostructures;Journal of Applied Physics;1995-05
5. Electrical properties of Schottky contacts toN‐type ZnS0.07Se0.93epilayers;Journal of Applied Physics;1995-04
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