Investigation of persistent photoconductivity in nitrogen-doped ZnSe/GaAs heterojunctions grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. R.H. Bube, in: R.K. Williardson, A.C. Beer (Eds.), Semiconductors and Semimetals, Vol. 3, Academic Press, New York, 1967.
2. Effects of II–VI epitaxy on III–V surfaces: A study of ZnSe on GaAs
3. Observation of hysteresis, transients, and photoeffects in the electrical properties of ZnSe/GaAs heterojunctions
4. Study of current‐voltage characteristic in a ZnSe‐based II‐VI laser diode
5. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
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