Author:
Gautier G.,Ventura L.,Jérisian R.,Kouassi S.,Leborgne C.,Morillon B.,Roy M.
Subject
Physics and Astronomy (miscellaneous)
Reference14 articles.
1. Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures
2. A novel capacitor technology based on porous silicon
3. T. Nitta, T. Minato, M. Yano, A. Uenisi, M. Harada, and S. Hine, Proceedings of the 12th International Symposium on Power Semiconductor Device, Toulouse, France, 22–25 May 2000 (IEEE, New York, (2000), p. 73.
4. An ultra-small isolation area for 600V class reverse blocking IGBT with deep trench isolation process (TI-RB-IGBT)
5. Vertical RESURF Diodes Manufactured by Deep-Trench Etch and Vapor-Phase Doping
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献