Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3327826
Reference23 articles.
1. Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics
2. Exciton-related electroluminescence from ZnO nanowire light-emitting diodes
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4. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices
5. Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO
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